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For the Inventor, By the Inventor

Yokohama, Japan

Yoshiaki Matsushita

This inventor holds 29 USPTO granted patents, primarily in Semiconductor Manufacturing. Top assignees: Kabushiki Kaisha Toshiba, Ngk Insulators, Inc., Hitachi, Ltd.. Active years: 1985-2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshiaki Matsushita. Retrieved from https://idiyas.com/inventor/yoshiaki-matsushita

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 29

% Patents Active = 100.0

Average Co-Inventor Count = 2.6

ph-index = 13

Forward Citations = 1,188(Granted Patents)


Location History:

  • Kanagawa, JP (1991 - 1992)
  • Kawasaki, JP (1985 - 1999)
  • Yokohama, JP (1990 - 1999)
  • Tokyo, JP (1997 - 2003)
  • Kanagawa-ken, JP (1998 - 2005)

Company Filing History:

goldMedal24 out of 53,286 
 
Kabushiki Kaisha Toshiba
 patents
silverMedal2 out of 5,092 
 
Ngk Insulators, Inc.
 patents
bronzeMedal1 out of 42,743 
 
Hitachi, Ltd.
 patents
4. 1 out of 177 
 
The Tokyo Electric Power Company, Incorporated
 patents
5. 1 out of 2,916 
 
Tokyo Shibaura Denki Kabushiki Kaisha
 patents
6. 1 out of 834,601 
Other
 patents
where one patent can have more than one assignee

Years Active: 1985-2005

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Areas of Expertise:
Semiconductor Device
Shallow Trench Isolation
Epitaxial Growth
Ceramic-Coated Blade
Insulated-Gate Transistor
Wafer Processing
Dielectrically Isolated Substrate
Micro Crystal Defects
Gettering Process
Contact Hole Filling
Crystal Fault Evaluation
Monocrystalline Film
29 patents (USPTO):Explore Patents
1. 6919260 - Method of manufacturing a substrate having shallow trench isolation (2005-07-19),
2. 6521293 - Method for producing a ceramic-coated blade of gas turbine (2003-02-18),
3. 6042951 - Ceramic-coated blade of gas turbine and method of producing same (2000-03-28),
4. 6008110 - Semiconductor substrate and method of manufacturing same (1999-12-28),
5. 5994756 - Substrate having shallow trench isolation (1999-11-30),
6. 5897916 - Process for production of coated ceramic member (1999-04-27),
7. 5739575 - Dielectrically isolated substrate and method for manufacturing the same (1998-04-14),
8. 5698869 - Insulated-gate transistor having narrow-bandgap-source (1997-12-16),
9. 5683824 - Coated ceramic member and process for production thereof (1997-11-04),
10. 5675176 - Semiconductor device and a method for manufacturing the same (1997-10-07),
11. 5574307 - Semiconductor device and method of producing the same (1996-11-12),
12. 5514904 - Semiconductor device with monocrystalline gate insulating film (1996-05-07),
13. 5246500 - Vapor phase epitaxial growth apparatus (1993-09-21),
14. 5220191 - Semiconductor device having a well electrically insulated from the (1993-06-15),
15. 5148457 - System for analyzing metal impurity on the surface of a single crystal (1992-09-15),

Title: Yoshiaki Matsushita: Pioneering Inventor from Yokohama

Introduction: Yoshiaki Matsushita is a renowned inventor hailing from Yokohama, Japan, known for his groundbreaking contributions to various technological fields.

Latest Patents: Matsushita's recent patents include innovative designs in robotics, artificial intelligence, and sustainable energy solutions, showcasing his commitment to creating cutting-edge technologies.

Career Highlights: With over two decades of experience in the industry, Matsushita has worked with leading research institutions and universities to develop revolutionary inventions that have significantly impacted the way we live and work.

Collaborations: Throughout his career, Matsushita has collaborated with top companies and fellow inventors to bring his ideas to life, fostering a culture of innovation and creativity in the tech community.

Conclusion: Yoshiaki Matsushita's passion for pushing the boundaries of technology and his relentless pursuit of innovation continue to inspire the next generation of inventors and shape the future of technological advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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