The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 1993
Filed:
Aug. 30, 1991
Applicant:
Inventor:
Yoshiaki Matsushita, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257499 ; 257368 ; 257369 ; 257379 ; 257610 ;
Abstract
The semiconductor device comprises a semiconductor substrate 11; a semiconductor layer 12 different in conductivity type from and lower in oxygen concentration than the semiconductor substrate, and formed uniformly on the substrate; a well region 13 different in conductivity type from the semiconductor layer and formed into an island shape in the semiconductor layer so that the bottom surface thereof is 1 to 20 .mu.m away from the surface of the substrate; and both or either of a MOS transistor or a capacitance formed in the semiconductor layer or the well region so as to be electrically insulated from the substrate.