The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 1996
Filed:
Aug. 26, 1994
Shinji Onga, Fujisawa, JP;
Takako Okada, Tokyo, JP;
Kouichirou Inoue, Yokohama, JP;
Yoshiaki Matsushita, Yokohama, JP;
Kikuo Yamabe, Yokohama, JP;
Hiroaki Hazama, Yokohama, JP;
Haruo Okano, Tokyo, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor device includes a monocrystalline silicon substrate, an insulating film consisting of a monocrystalline silicon oxide formed on the surface of the monocrystalline silicon substrate, and a conductive film formed on the insulating film. The monocrystalline silicon substrate has a (100) plane orientation, the insulating film essentially consists of .beta.-cristobalite having a unit structure in a P4.sub.1 2.sub.1 2 structural expression in such a manner that every other silicon atoms of four silicon atoms aligned about a C-axis are arranged on two adjacent silicon atoms aligned in a 110! direction on an Si (100) plane, and that a plane including the C-axis of the .beta.-cristobalite and the 110! direction is set perpendicular to the (100) plane.