Yonggen He

Title: Yonggen He: Innovator in Semiconductor Technology

Introduction

Yonggen He is a prominent inventor based in Shanghai, China, known for his significant contributions to the field of semiconductor technology. With a total of 11 patents to his name, he has made remarkable advancements in semiconductor devices and their fabrication methods.

Latest Patents

Yonggen He's latest patents include innovative methods for fabricating semiconductor devices. One notable patent describes a method that involves providing a semiconductor substrate and forming a first gate structure on it. This method also includes the formation of offset spacers doped with specific ions to enhance the anti-corrosion ability of the spacers. Additionally, trenches are created in the semiconductor substrate, and stress layers are formed within these trenches. Another significant patent focuses on FinFET semiconductor devices, detailing the formation of discrete fins on a substrate and the creation of an insulation layer between these fins. This method includes selective nitriding of the fin's top portion and the formation of a stress layer to fill openings between adjacent sidewall spacers.

Career Highlights

Throughout his career, Yonggen He has worked with notable companies in the semiconductor industry, including Semiconductor Manufacturing International Corporation in both Beijing and Shanghai. His expertise in semiconductor technology has positioned him as a key player in the development of advanced fabrication methods.

Collaborations

Yonggen He has collaborated with esteemed colleagues such as Qingsong Wei and Huojin Tu, contributing to various projects that have furthered the field of semiconductor technology.

Conclusion

Yonggen He is a distinguished inventor whose work in semiconductor technology has led to significant advancements in the industry. His innovative patents and collaborations highlight his commitment to pushing the boundaries of technology.