The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Dec. 04, 2015
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Yonggen He, Shanghai, CN;
Bing Wu, Shanghai, CN;
Abstract
FinFET semiconductor devices and fabrication methods are provided. Discrete fins are formed on a substrate. An insulation layer is formed on the substrate between the discrete fins, the insulation layer having a top surface lower than a top surface of the fin and covering a portion of a sidewall surface of the fin. A sidewall spacer is formed covering the sidewall surface of the fin and exposing the top surface of the fin. A top portion of the fin is selectively nitrided to convert a thickness portion of the fin into a semiconductor nitride layer on a remainder fin. The semiconductor nitride layer is removed to form an opening on the remainder fin and between adjacent sidewall spacers. A stress layer is formed to fill the opening.