Wuhan, China

Yonggang Yang

This inventor holds 10 USPTO granted patents and 17 published patent applications and 1 EPO patent. Top assignees: Yangtze Memory Technologies Co., Ltd., Yangtze Memory Technologies., Ltd.. Active years: 2020-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yonggang Yang. Retrieved from https://idiyas.com/inventor/yonggang-yang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 10 

% Patents Active = 90.0

 

Average Co-Inventor Count = 1.3

ph-index = 1

Forward Citations = 1(Granted Patents)


Location History:

  • Hubei, CN (2020)
  • Wuhan, CN (2021 - 2024)

Company Filing History:


Years Active: 2020-2026

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10 patents (USPTO):Explore Patents

Title: Yonggang Yang: Innovator in Memory Device Technology

Introduction

Yonggang Yang is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of semiconductor technology, particularly in memory devices. With a total of 10 patents to his name, Yang continues to push the boundaries of innovation in his industry.

Latest Patents

One of his latest patents is titled "Memory device and fabrication method thereof." This invention outlines a method for fabricating a memory device that includes a semiconductor structure with a core area and a contact area. The method involves etching to form channel holes that penetrate dielectric layer pairs, which are crucial for the device's functionality. Another notable patent is the "Intelligent customizable wet processing system." This invention describes a method for uniform wet processing of wafers, utilizing multiple detectors to measure wafer characteristics and adjust processing parameters accordingly.

Career Highlights

Yonggang Yang is currently employed at Yangtze Memory Technologies Co., Ltd. His work at this company has positioned him as a key player in the development of advanced memory technologies. His innovative approaches have garnered attention and respect within the semiconductor community.

Collaborations

Yang has collaborated with notable colleagues, including Gonglian Wu and Xianglin Lv. These partnerships have contributed to the successful development of his patented technologies.

Conclusion

Yonggang Yang's contributions to memory device technology exemplify his commitment to innovation and excellence. His patents reflect a deep understanding of semiconductor processes and a drive to enhance technological capabilities.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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