The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2026

Filed:

Dec. 28, 2022
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Jiandong Wang, Wuhan, CN;

Wenbin Sun, Wuhan, CN;

Siliu Zhang, Wuhan, CN;

Xiaofen Zheng, Wuhan, CN;

Yuping Xia, Wuhan, CN;

Yonggang Yang, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 41/27 (2023.01); H10B 43/27 (2023.01); H10B 80/00 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 41/27 (2023.02); H10B 80/00 (2023.02);
Abstract

A 3D memory device includes a conductor/insulator stack containing a conductive layer and a dielectric layer alternatingly stacked, a channel hole structure in the conductor/insulator stack, and a gate line slit (GLS) structure. The GLS structure includes a main section and an end section. The main section extends along a first direction and has a first width measured along a second direction that is perpendicular to the first direction. The end section has a second width measured along the second direction. The second width is larger than the first width.


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