EPO Patents = 1

Average Co-Inventor Count = 4.7

ph-index = 18

Forward Citations = 1,162(Granted Patents)

Forward Citations (Not Self Cited) = 1,140(Oct 12, 2025)

Inventors with similar research interests:

Location History:

Shiga, JP (1989 - 1990)
Ueno, JP (1988 - 1992)
Nagahama, JP (1988 - 1998)
Hikone, JP (1993 - 1999)
Nara, JP (1996 - 1999)
Kyoto-fu, JP (2002)
Souraku-gun, JP (2002 - 2003)
Kyoto, JP (2001 - 2009)
Soraku-gun, JP (2000 - 2010)

Company Filing History:

50 out of 90,594

Canon Kabushiki Kaisha

patents

7 out of 25,530

Sharp Kabushiki Kaisha Corporation

patents

Years Active: 1988-2010

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57 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 7750233 - Thin film solar cell and manufacturing method thereof (2010-07-06),

2. 7722738 - Semiconductor device manufacturing unit and semiconductor device manufacturing method (2010-05-25),

3. 7565880 - Plasma CVD apparatus, and method for forming film and method for forming semiconductor device using the same (2009-07-28),

4. 7195673 - Plasma CVD apparatus, and method for forming film and method for forming semiconductor device using the same (2007-03-27),

5. 7032536 - Thin film formation apparatus including engagement members for support during thermal expansion (2006-04-25),

6. 6822157 - Thin film solar battery module (2004-11-23),

7. 6525264 - Thin-film solar cell module (2003-02-25),

8. 6495392 - Process for producing a semiconductor device (2002-12-17),

9. 6472296 - Fabrication of photovoltaic cell by plasma process (2002-10-29),

10. 6436797 - Apparatus and method for forming a deposited film on a substrate (2002-08-20),

11. 6368944 - Method of manufacturing photovoltaic element and apparatus therefor (2002-04-09),

12. 6313430 - Plasma processing apparatus and plasma processing method (2001-11-06),

13. 6306267 - Method of producing a photovoltaic device using a sputtering method (2001-10-23),

14. 6287943 - Deposition of semiconductor layer by plasma process (2001-09-11),

15. 6271055 - Process for manufacturing semiconductor element using non-monocrystalline semiconductor layers of first and second conductivity types and amorphous and microcrystalline I-type semiconductor layers (2001-08-07),

Title: Inventor Yasushi Fujioka - Revolutionizing Technology in Kyoto

Introduction: Yasushi Fujioka is a pioneering inventor based in Kyoto, Japan, known for his groundbreaking contributions to the field of technology.

Latest Patents: Fujioka's latest patents include innovative designs in the realm of robotics and artificial intelligence, showcasing his commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Yasushi Fujioka has established himself as a leading figure in the tech industry, with a strong focus on creating solutions that enhance efficiency and productivity.

Collaborations: Throughout his career, Fujioka has collaborated with top research institutions and leading tech companies to bring his inventions to life, fostering a culture of innovation and progress in the industry.

Conclusion: Yasushi Fujioka's relentless pursuit of innovation and his dedication to shaping the future of technology make him a standout figure in the world of inventors, with a legacy that continues to inspire generations to come.

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1 patent (EPO):

Please report any incorrect information to support@idiyas.com

Inventor’s Patent Attorneys refers to legal professionals with specialized expertise in representing inventors throughout the patent process. These attorneys assist inventors in navigating the complexities of patent law, including filing patent applications, conducting patent searches, and protecting intellectual property rights. They play a crucial role in helping inventors secure patents for their innovative creations.