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For the Inventor, By the Inventor

Kyoto, Japan

Yasushi Fujioka

This inventor holds 57 USPTO granted patents and 1 EPO patent, primarily in Photovoltaic Technology (CPC class 430 ). Top assignees: Canon Kabushiki Kaisha, Sharp Kabushiki Kaisha Corporation. Active years: 1988-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yasushi Fujioka. Retrieved from https://idiyas.com/inventor/yasushi-fujioka

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 57

% Patents Active = 89.5


Average Co-Inventor Count = 4.7

ph-index = 19

Forward Citations = 1,164(Granted Patents)

Forward Citations (Not Self Cited) = 1,140(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Shiga, JP (1989 - 1990)
  • Ueno, JP (1988 - 1992)
  • Nagahama, JP (1988 - 1998)
  • Hikone, JP (1993 - 1999)
  • Nara, JP (1996 - 1999)
  • Kyoto-fu, JP (2002)
  • Souraku-gun, JP (2002 - 2003)
  • Kyoto, JP (2001 - 2009)
  • Soraku-gun, JP (2000 - 2010)

Company Filing History:

goldMedal50 out of 93,085 
 
Canon Kabushiki Kaisha
 patents
silverMedal7 out of 25,974 
 
Sharp Kabushiki Kaisha Corporation
 patents

Years Active: 1988-2010

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Areas of Expertise:
Thin Film Solar Cells
Semiconductor Manufacturing
Plasma Processing
Photovoltaic Devices
Film Deposition
Sputtering Method
Continuous Forming
Thermal Expansion
CVD Apparatus
Non-Monocrystalline Layers
Functional Deposited Films
Microwave Energy
57 patents (USPTO):Explore Patents
1. 7750233 - Thin film solar cell and manufacturing method thereof (2010-07-06),
2. 7722738 - Semiconductor device manufacturing unit and semiconductor device manufacturing method (2010-05-25),
3. 7565880 - Plasma CVD apparatus, and method for forming film and method for forming semiconductor device using the same (2009-07-28),
4. 7195673 - Plasma CVD apparatus, and method for forming film and method for forming semiconductor device using the same (2007-03-27),
5. 7032536 - Thin film formation apparatus including engagement members for support during thermal expansion (2006-04-25),
6. 6822157 - Thin film solar battery module (2004-11-23),
7. 6525264 - Thin-film solar cell module (2003-02-25),
8. 6495392 - Process for producing a semiconductor device (2002-12-17),
9. 6472296 - Fabrication of photovoltaic cell by plasma process (2002-10-29),
10. 6436797 - Apparatus and method for forming a deposited film on a substrate (2002-08-20),
11. 6368944 - Method of manufacturing photovoltaic element and apparatus therefor (2002-04-09),
12. 6313430 - Plasma processing apparatus and plasma processing method (2001-11-06),
13. 6306267 - Method of producing a photovoltaic device using a sputtering method (2001-10-23),
14. 6287943 - Deposition of semiconductor layer by plasma process (2001-09-11),
15. 6271055 - Process for manufacturing semiconductor element using non-monocrystalline semiconductor layers of first and second conductivity types and amorphous and microcrystalline I-type semiconductor layers (2001-08-07),

Title: Inventor Yasushi Fujioka - Revolutionizing Technology in Kyoto

Introduction: Yasushi Fujioka is a pioneering inventor based in Kyoto, Japan, known for his groundbreaking contributions to the field of technology.

Latest Patents: Fujioka's latest patents include innovative designs in the realm of robotics and artificial intelligence, showcasing his commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Yasushi Fujioka has established himself as a leading figure in the tech industry, with a strong focus on creating solutions that enhance efficiency and productivity.

Collaborations: Throughout his career, Fujioka has collaborated with top research institutions and leading tech companies to bring his inventions to life, fostering a culture of innovation and progress in the industry.

Conclusion: Yasushi Fujioka's relentless pursuit of innovation and his dedication to shaping the future of technology make him a standout figure in the world of inventors, with a legacy that continues to inspire generations to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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