The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
Nov. 10, 2003
Katsushi Kishimoto, Soraku-gun, JP;
Yusuke Fukuoka, Ikoma-gun, JP;
Yasushi Fujioka, Soraku-gun, JP;
Hiroyuki Fukuda, Shiki-gun, JP;
Katsuhiko Nomoto, Kashiwara, JP;
Katsushi Kishimoto, Soraku-gun, JP;
Yusuke Fukuoka, Ikoma-gun, JP;
Yasushi Fujioka, Soraku-gun, JP;
Hiroyuki Fukuda, Shiki-gun, JP;
Katsuhiko Nomoto, Kashiwara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor device manufacturing unit is provided, wherein a cathode and an anode can be placed in a simple structure; wherein excellent film deposition and film thickness distribution can be gained; and wherein no cooling devices are required to be provided. A chamberis formed so that the inside thereof can be controlled at a vacuum of an arbitrary degree. Anode supportsfor supporting an anodeare placed at the bottom of the internal structure. The anodeis made of a material having a high electrical conductivity and a high heat resistance. The temperature of the anodeis controlled by a heaterso as to be in a range of from room temperature to 600° C. A cathodeis placed on a cathode supportso as to face the anode. The cathode supportis attached to an internal structuremade of a frame in a rectangular prism form provided within the chamber