The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2002
Filed:
May. 26, 2000
Yasushi Fujioka, Souraku-gun, JP;
Shotaro Okabe, Nara, JP;
Masahiro Kanai, Tokyo, JP;
Akira Sakai, Souraku-gun, JP;
Tadashi Sawayama, Souraku-gun, JP;
Yuzo Koda, Kyotanabe, JP;
Takahiro Yajimaa, Souraku-gun, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A film-forming apparatus for forming a non-single crystalline silicon series semiconductor film on a substrate in a film-forming space provided in a vacuum chamber using a very high frequency power supplied through a high frequency power supply means comprising a bar-like shaped electrode, wherein said bar-like shaped electrode is arranged such that the longitudinal direction thereof intersects a direction for said substrate to be moved, and a length of said film-forming space relative to the direction for said substrate to be moved is in a range of from {fraction (1/16)} to ½ of a wavelength of said very high frequency power supplied in said film-forming space. A film-forming method for forming a non-single crystalline silicon series semiconductor film on a substrate using said film-forming apparatus.