Yasushi Akasaka

This inventor holds 25 USPTO granted patents, primarily in Semiconductor Manufacturing. Top assignees: Kabushiki Kaisha Toshiba, Fujitsu Corporation. Active years: 1995-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yasushi Akasaka. Retrieved from https://idiyas.com/inventor/yasushi-akasaka

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 25

% Patents Active = 60.0

Average Co-Inventor Count = 3.3

ph-index = 13

Forward Citations = 999(Granted Patents)

Location History:

Tsuchiura, JP (2005 - 2007)
Ibaraki-ken, JP (2008)
Yokohama, JP (1995 - 2010)

Company Filing History:

25 out of 53,262

Kabushiki Kaisha Toshiba

where one patent can have more than one assignee

Years Active: 1995-2010

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Areas of Expertise:

Semiconductor Device

Dummy Gate Wiring

Element Isolating Film

Threshold Voltage

Polymetal Structure

MOSFET

Conductive Oxidation

Channel Impurity

Gate Electrode

Fabrication Method

Solid Phase Diffusion

25 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7772671 - Semiconductor device having an element isolating insulating film (2010-08-10),

2. 7772076 - Method of manufacturing semiconductor device using dummy gate wiring layer (2010-08-10),

3. 7432147 - Method of manufacturing semiconductor device (2008-10-07),

4. 7285461 - Semiconductor device and method of manufacturing the same (2007-10-23),

5. 7232751 - Semiconductor device and manufacturing method therefor (2007-06-19),

6. 7208797 - Semiconductor device (2007-04-24),

7. 7078776 - Low threshold voltage semiconductor device (2006-07-18),

8. 6989316 - Semiconductor device and method for manufacturing (2006-01-24),

9. 6956259 - Semiconductor device and method of manufacturing the same (2005-10-18),

10. 6939787 - Method for fabricating semiconductor device having gate electrode with polymetal structure of polycrystalline silicon film and metal film (2005-09-06),

11. 6893980 - Semiconductor device and manufacturing method therefor (2005-05-17),

12. 6770944 - Semiconductor device having counter and channel impurity regions (2004-08-03),

13. 6617226 - Semiconductor device and method for manufacturing the same (2003-09-09),

14. 6541829 - Semiconductor device and method of manufacturing the same (2003-04-01),

15. 6346438 - Method of manufacturing a semiconductor device (2002-02-12),

Title: Yasushi Akasaka: Pioneering Inventor from Yokohama

Introduction: Yasushi Akasaka is a renowned inventor hailing from Yokohama, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Akasaka holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his continuous dedication to pushing the boundaries of scientific advancement.

Career Highlights: With a career spanning over two decades, Yasushi Akasaka has worked with leading research institutions and tech companies, playing a pivotal role in the development of cutting-edge technologies that have revolutionized various industries.

Collaborations: Throughout his career, Akasaka has collaborated with top engineers, scientists, and inventors from around the world, fostering a culture of innovation and knowledge sharing that has led to numerous breakthroughs in the field of technology.

Conclusion: Yasushi Akasaka's passion for innovation and his relentless pursuit of excellence have solidified his position as a trailblazer in the world of inventions, inspiring future generations to push the boundaries of what is possible in the realm of technology.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]