The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2005
Filed:
Jun. 11, 2003
Applicant:
Yasushi Akasaka, Tsuchiura, JP;
Inventor:
Yasushi Akasaka, Tsuchiura, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L021/336 ;
U.S. Cl.
CPC ...
Abstract
Disclosed is a semiconductor device comprises a semiconductor substrate having on its surface a trench, a polycrystalline semiconductor film formed inside the trench, a diffusion layer deposited on a surface region of the semiconductor substrate, and a metal semiconductor nitride layer interposed between the diffusion layer and the polycrystalline semiconductor film, the metal semiconductor nitride layer including a metal, nitrogen and a semiconductor constituting the semiconductor substrate, and electrically connecting the polycrystalline semiconductor film with the diffusion layer.