The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2005
Filed:
Nov. 08, 2000
Applicants:
Yasushi Akasaka, Yokohama, JP;
Kazuaki Nakajima, Tokyo, JP;
Kiyotaka Miyano, Tokyo, JP;
Kyoichi Suguro, Yokohama, JP;
Inventors:
Yasushi Akasaka, Yokohama, JP;
Kazuaki Nakajima, Tokyo, JP;
Kiyotaka Miyano, Tokyo, JP;
Kyoichi Suguro, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L021/8232 ;
U.S. Cl.
CPC ...
Abstract
According to the manufacturing method of the semiconductor device of the present invention, an oxide film is formed on a metal film formed on a main surface of a semiconductor substrate by exposing the metal film to the oxidizing gas. The oxide film is then reduced in a reducing atmosphere, and a protection film is formed on the surface of the metal film reduced in the reducing step. In this manner, the damage to the surface of the metal film can be prevented.