The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2005
Filed:
Oct. 13, 2004
Fumio Ohtake, Kawasaki, JP;
Yasushi Akasaka, Yokohama, JP;
Atsushi Murakoshi, Kawasaki, JP;
Kyoichi Suguro, Yokohama, JP;
Fumio Ohtake, Kawasaki, JP;
Yasushi Akasaka, Yokohama, JP;
Atsushi Murakoshi, Kawasaki, JP;
Kyoichi Suguro, Yokohama, JP;
Fujitsu Limited, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
The semiconductor device comprises a pair of impurity diffused regions formed in a silicon substrate, spaced from each other, and a gate electrodeformed above the silicon substratebetween the pair of impurity diffused regionsintervening a gate insulation filmtherebetween. The gate electrodeis formed of a polycrystalline silicon filmformed on the gate insulation film, a polycrystalline silicon filmformed on the polycrystalline silicon filmand having crystal grain boundaries discontinuous to the polycrystalline silicon film, a metal nitride filmformed on the polycrystalline silicon film, and a metal filmformed on the barrier metal film. Whereby diffusion of the boron from the first polycrystalline silicon filmtoward the metal nitride filmcan be decreased. Thus, depletion of the gate electrodecan be suppressed.