The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2007
Filed:
Dec. 21, 2001
Atsushi Yagishita, Yokohama, JP;
Kouji Matsuo, Yokohama, JP;
Yasushi Akasaka, Yokohama, JP;
Kyoichi Suguro, Yokohama, JP;
Yoshitaka Tsunashima, Yokohama, JP;
Atsushi Yagishita, Yokohama, JP;
Kouji Matsuo, Yokohama, JP;
Yasushi Akasaka, Yokohama, JP;
Kyoichi Suguro, Yokohama, JP;
Yoshitaka Tsunashima, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki-shi, JP;
Abstract
There is provided a semiconductor device including a substrate, a device isolation insulating film formed on the substrate, a gate electrode formed on the substrate, a gate wiring layer formed in the device isolation insulating film and connected to the gate electrode, source and drain electrodes arranged on the substrate to face each other via the gate electrode, and an insulating film covering bottom and side surfaces of each of the gate electrode and the gate wiring layer, wherein the gate, source and drain electrodes and gate wiring layer have upper surface levels equal to or lower than that of the device isolation insulating film.