Company Filing History:

41 out of 52,711

Kabushiki Kaisha Toshiba

where one patent can have more than one assignee

Years Active: 2001-2015

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41 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 9153779 - Resistance change memory element and resistance change memory (2015-10-06),

2. 9087770 - Semiconductor memory device (2015-07-21),

3. 9040950 - Nonvolatile memory device and method for manufacturing same (2015-05-26),

4. 9006697 - Resistance change element and nonvolatile memory device (2015-04-14),

5. 8633535 - Nonvolatile semiconductor memory (2014-01-21),

6. 8486828 - Semiconductor device manufacturing method (2013-07-16),

7. 8236641 - Semiconductor device with extension structure and method for fabricating the same (2012-08-07),

8. 8148717 - Manufacturing method for semiconductor device and semiconductor device (2012-04-03),

9. 8138552 - Semiconductor device and method of manufacturing the same (2012-03-20),

10. 7989903 - Semiconductor device with extension structure and method for fabricating the same (2011-08-02),

11. 7981795 - Semiconductor device manufacturing method (2011-07-19),

12. 7939891 - Semiconductor device having MISFETs and manufacturing method thereof (2011-05-10),

13. 7902603 - Semiconductor device and method of manufacturing the same (2011-03-08),

14. 7902030 - Manufacturing method for semiconductor device and semiconductor device (2011-03-08),

15. 7781848 - Semiconductor device with extension structure and method for fabricating the same (2010-08-24),

Title: Innovations of Kouji Matsuo: A Pioneer in Semiconductor Memory Technology

Introduction

Kouji Matsuo, hailing from Yokohama, Japan, is a remarkable inventor known for his significant contributions to semiconductor memory technology. With a total of 41 patents to his name, Matsuo has established himself as a leading figure in the world of innovations, particularly in the field of resistance change memory elements.

Latest Patents

Among Matsuo's latest patents are groundbreaking inventions such as the "Resistance Change Memory Element" and "Resistance Change Memory." The resistance change memory element consists of a first electrode layer, a second electrode layer, and a memory layer positioned between them. This unique memory layer incorporates multiple first oxide layers within a second oxide layer, where the resistivity of each first oxide layer exceeds that of the second oxide layer, enhancing memory performance. Additionally, he developed a semiconductor memory device featuring a structure with first and second interconnects. This device includes a memory element that utilizes a variable resistance film stacked with a stress-generating film to apply stress, optimizing its efficiency in memory applications.

Career Highlights

Matsuo's career has seen him hold significant roles in prominent companies such as Toshiba Corporation and Sony Corporation. Throughout his tenure, he played a pivotal role in advancing technology and developing innovative memory solutions that have transformed the semiconductor industry.

Collaborations

Kouji Matsuo has had the pleasure of working alongside talented individuals such as Kyoichi Suguro and Atsushi Yagishita. These collaborations have allowed for the exchange of ideas and advancements in technology, further enriching his contributions to the field of semiconductor memory.

Conclusion

Kouji Matsuo's innovative spirit and dedication to technology have earned him a prominent place among influential inventors in the semiconductor industry. His latest patents exemplify his commitment to pushing the boundaries of memory technology. As he continues to inspire future generations of inventors, Matsuo remains a key figure to watch in the ever-evolving world of innovations.

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