The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2011
Filed:
Jun. 12, 2009
Takayuki Ito, Kanagawa-ken, JP;
Yusuke Oshiki, Kanagawa-ken, JP;
Kouji Matsuo, Kanagawa-ken, JP;
Kenichi Yoshino, Kanagawa-ken, JP;
Takaharu Itani, Kanagawa-ken, JP;
Takuo Ohashi, Kanagawa-ken, JP;
Toshihiko Iinuma, Kanagawa-ken, JP;
Kiyotaka Miyano, Tokyo, JP;
Kunihiro Miyazaki, Oita-ken, JP;
Takayuki Ito, Kanagawa-ken, JP;
Yusuke Oshiki, Kanagawa-ken, JP;
Kouji Matsuo, Kanagawa-ken, JP;
Kenichi Yoshino, Kanagawa-ken, JP;
Takaharu Itani, Kanagawa-ken, JP;
Takuo Ohashi, Kanagawa-ken, JP;
Toshihiko Iinuma, Kanagawa-ken, JP;
Kiyotaka Miyano, Tokyo, JP;
Kunihiro Miyazaki, Oita-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A manufacturing method for semiconductor device includes: forming an opening, in a surface of a semiconductor substrate being composed of first atom, the opening having an opening ratio y to an area of the surface of the semiconductor substrate ranging from 5 to 30%; forming an epitaxial layer in the opening, the epitaxial layer being made of a mixed crystal containing a second atom in a concentration ranging from 15 to 25%, and the second atom having a lattice constant different from a lattice constant of the first atom; implanting impurity ion into the epitaxial layer; and performing activation annealing at a predetermined temperature T, the predetermined temperature T being equal to or higher than 1150° C. and satisfies a relationship of y≦1E-5exp(21541/T).