The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Feb. 28, 2013
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Noritake Oomachi, Tokyo, JP;
Junichi Wada, Mie-ken, JP;
Kouji Matsuo, Aichi-ken, JP;
Tomotaka Ariga, Mie-ken, JP;
Yoshio Ozawa, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A resistance change element includes a first conductive layer, a second conductive layer, and a memory layer. The memory layer is provided between the first conductive layer and the second conductive layer. The memory layer is capable of reversibly transitioning between a first state and a second state due to at least one of a voltage and a current supplied via the first conductive layer and the second conductive layer. A resistance of the second state is higher than a resistance of the first state. The memory layer includes niobium oxide. One of a (100) plane, a (010) plane, and a (110) plane of the memory layer is oriented in a stacking direction from the first conductive layer toward the second conductive layer.