Kanazawa Ishikawa, Japan

Yasuhiro Isobe

USPTO Granted Patents = 25 

Average Co-Inventor Count = 4.4

ph-index = 1

Forward Citations = 5(Granted Patents)


Location History:

  • Ishikawa-ken, JP (2015 - 2016)
  • Kanazawa Ishikawa, JP (2017 - 2018)
  • Ota, JP (2020 - 2024)
  • Ota Tokyo, JP (2022 - 2024)
  • Tokyo, JP (2022 - 2024)

Company Filing History:


Years Active: 2015-2025

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25 patents (USPTO):Explore Patents

Title: Yasuhiro Isobe: A Pioneer in Nitride Semiconductor Innovations

Introduction

Yasuhiro Isobe, based in Kanazawa Ishikawa, Japan, has made significant contributions to the field of semiconductor technology, particularly with his innovative work on nitride semiconductor devices. With a robust portfolio of 21 patents, Isobe is recognized for his advancements that enhance the performance of semiconductor devices.

Latest Patents

Isobe's latest patents showcase cutting-edge technology in nitride semiconductors. One noteworthy invention is the nitride semiconductor device with an element isolation area. This technology involves the integration of first and second nitride semiconductor layers, featuring specific regions and components including gate and source electrodes, all designed to optimize performance and efficiency. Another significant patent revolves around a semiconductor device that brings together a first nitride semiconductor layer and a second layer with a smaller band gap. This invention highlights the sophisticated design and application of multiple semiconductor materials to achieve improved functionality.

Career Highlights

Throughout his career, Yasuhiro Isobe has been associated with prominent companies in the electronics industry, including Kabushiki Kaisha Toshiba and Toshiba Electronic Devices & Storage Corporation. His experience in these leading firms has greatly influenced his research and innovation in semiconductor technology, allowing him to develop patents that address contemporary challenges in electronics.

Collaborations

Isobe has collaborated with notable peers such as Akira Yoshioka and Hung Hung. These partnerships have fostered an environment of innovation, enabling shared insights and advancements in the development of semiconductor devices. Working alongside such talented individuals has undoubtedly enriched Isobe’s contributions to the field.

Conclusion

Yasuhiro Isobe continues to pave the way in the field of semiconductor technology through his inventive patents and collaborative efforts. His work not only enhances our understanding of nitride semiconductors but also has potential implications for future electronic devices and applications. With a solid track record of innovation, Isobe remains a key figure in advancing semiconductor technology.

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