The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 10, 2025

Filed:

Sep. 07, 2021
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventors:

Yasuhiro Isobe, Tokyo, JP;

Hung Hung, Kawasaki Kanagawa, JP;

Akira Yoshioka, Yokohama Kanagawa, JP;

Toru Sugiyama, Tokyo, JP;

Masaaki Onomura, Setagaya Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/47 (2025.01); H10D 64/00 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 64/112 (2025.01); H10D 30/475 (2025.01); H10D 30/4755 (2025.01); H10D 64/01 (2025.01); H10D 64/111 (2025.01);
Abstract

A semiconductor device includes a first nitride semiconductor layer, a second nitride semiconductor layer provided on the first nitride semiconductor layer, the second nitride semiconductor layer having a band gap larger than the first nitride semiconductor layer, a first electrode provided on the second nitride semiconductor layer, a second electrode provided on the second nitride semiconductor layer, a first insulating film provided between the first electrode and the second electrode on the second nitride semiconductor layer, the first insulating film being in connect with the second nitride semiconductor layer and including a first insulating material, a second insulating film provided on the second nitride semiconductor layer between the first electrode and the first insulating film, on the first insulating film, and on the second nitride semiconductor layer between the first insulating film and the second electrode, the second insulating film including a second insulating material, a third electrode provided on the second insulating film between the first electrode and the first insulating film, and a fourth electrode including a first electrode portion and a second electrode portion, the first electrode portion being provided on the second insulating film between the third electrode and the first insulating film, and the second electrode portion being provided on the second insulating film on the first insulating film and being electrically connected to the first electrode portion.


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