The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

Mar. 02, 2022
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventors:

Toru Sugiyama, Musashino, JP;

Akira Yoshioka, Yokohama, JP;

Hung Hung, Kawasaki, JP;

Yasuhiro Isobe, Ota, JP;

Hitoshi Kobayashi, Yamato, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 23/00 (2006.01); H01L 25/07 (2006.01); H10D 30/47 (2025.01); H10D 62/85 (2025.01);
U.S. Cl.
CPC ...
H01L 23/49513 (2013.01); H01L 23/49575 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 25/072 (2013.01); H10D 30/47 (2025.01); H10D 62/8503 (2025.01); H01L 2224/32245 (2013.01); H01L 2224/48245 (2013.01);
Abstract

A semiconductor device includes a first terminal, a second terminal, a first chip, and a resistance part. The first chip includes a substrate electrically connected to the second terminal, a nitride semiconductor layer located on the substrate, a first drain electrode located on the nitride semiconductor layer and electrically connected to the first terminal, a first source electrode located on the nitride semiconductor layer and electrically connected to the second terminal, and a substrate capacitance between the first drain electrode and the substrate. The resistance part is connected in series in a path including the substrate capacitance between the first drain electrode and the second terminal.


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