The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2025
Filed:
Feb. 10, 2023
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Toru Sugiyama, Tokyo, JP;
Noriaki Yoshikawa, Tokyo, JP;
Yasuhiko Kuriyama, Yokohama Kanagawa, JP;
Akira Yoshioka, Yokohama Kanagawa, JP;
Hitoshi Kobayashi, Yamato Kanagawa, JP;
Hung Hung, Kawasaki Kanagawa, JP;
Yasuhiro Isobe, Tokyo, JP;
Tetsuya Ohno, Yokohama Kanagawa, JP;
Hideki Sekiguchi, Yokohama Kanagawa, JP;
Masaaki Onomura, Tokyo, JP;
Kabusbiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a first transistor, a first drive circuit including a second transistor, and a second drive circuit including a third transistor. The second transistor and the third transistor are connected in series; and a connection node of the second and third transistors is connected to a gate electrode of the first transistor. The first transistor, the second transistor, and the third transistor are normally-off MOS HEMTs formed in a first substrate that includes GaN. The first drive circuit charges a parasitic capacitance of the first transistor. The second drive circuit discharges the parasitic capacitance of the first transistor.