The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Aug. 25, 2023
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Akira Yoshioka, Yokohama Kanagawa, JP;
Hitoshi Kobayashi, Yamato Kanagawa, JP;
Hideki Sekiguchi, Yokohama Kanagawa, JP;
Hung Hung, Kawasaki Kanagawa, JP;
Yasuhiro Isobe, Narashino Chiba, JP;
Toru Sugiyama, Tokyo, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Toshiba Electronic Devices & Storage Corporation, Kawasaki, JP;
Abstract
A semiconductor device includes a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, a conductive part, an insulating part, and a third electrode. The second semiconductor layer is located on the first semiconductor layer. The first electrode is located on the second semiconductor layer. The first electrode includes an electrode part and an electrode extension part. The electrode part contacts the second semiconductor layer. The electrode extension part extends from an upper end portion of the electrode part. The conductive part is positioned between the first electrode and the second electrode. The conductive part contacts an upper surface of the second semiconductor layer and contacting the first electrode. The insulating part is located on the conductive part and is positioned between the conductive part and the electrode extension part.