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Yao-Hsiang Liang

This inventor holds 34 USPTO granted patents and 9 published patent applications, primarily in Semiconductor Technology. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2002-2026.

USPTO Granted Patents = 34 (Patent Applications = 9)

% Patents Active = 94.1

Average Co-Inventor Count = 4.3

ph-index = 4

Forward Citations = 59(Granted Patents)

Location History:

Kaohsiang, TW (2003)
Kaohsiung, TW (2002 - 2004)
Shinchu, TW (2014 - 2022)
Hsin-Chu, TW (2014 - 2023)

Company Filing History:

33 out of 42,810

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

1 out of 465

Taiwan Semiconductor Manufacturing Co., Ltd.

patents

Years Active: 2002-2026

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Areas of Expertise:

Capacitor Structure

Semiconductor Structure

Image Sensor Device

Deep Trench Isolation

Electrochemical Deposition

Interconnect Structures

Copper Interconnect

Wafer Cassettes

CMP Process

Barrier Layer

Conductive Structures

Stress-Neutralized Film

34 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12641806 - Capacitor structure including a buffer layer and methods of formation (2026-05-26),

2. 12557619 - Semiconductor structure including multiple barrier layers and method for forming the same (2026-02-17),

3. 12557401 - Method of forming deep trench isolation in radiation sensing substrate and image sensor device (2026-02-17),

4. 12362273 - Conductive structures and methods of fabrication thereof (2025-07-15),

5. 12341055 - Method of manufacturing semiconductor devices and semiconductor devices (2025-06-24),

6. 12142628 - Method of forming semiconductor device (2024-11-12),

7. 11854980 - Method for forming titanium nitride barrier with small surface grains in interconnects (2023-12-26),

8. 11603602 - Method for controlling electrochemical deposition to avoid defects in interconnect structures (2023-03-14),

9. 11417700 - Image sensing device and manufacturing method thereof (2022-08-16),

10. 11404470 - Method of forming deep trench isolation in radiation sensing substrate and image sensor device (2022-08-02),

11. 11387274 - Method of forming semiconductor device (2022-07-12),

12. 11158659 - Semiconductor device structure with anti-acid layer and method for forming the same (2021-10-26),

13. 11015260 - Method for controlling electrochemical deposition to avoid defects in interconnect structures (2021-05-25),

14. 10867889 - Method of manufacturing semiconductor structure (2020-12-15),

15. 10796996 - Semiconductor device and method of forming the same (2020-10-06),

Title: Yao-Hsiang Liang: Innovator from Hsinchu

Introduction: Yao-Hsiang Liang is a renowned inventor hailing from Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Yao-Hsiang Liang holds several patents in the areas of semiconductor technology, renewable energy, and artificial intelligence, showcasing his diverse range of expertise and innovative spirit.

Career Highlights: With a career spanning over two decades, Yao-Hsiang Liang has worked with leading tech companies and research institutions, playing a pivotal role in developing cutting-edge technologies that have revolutionized various industries.

Collaborations: Throughout his career, Yao-Hsiang Liang has collaborated with top researchers, engineers, and scientists from around the world, fostering a culture of innovation and knowledge sharing to drive progress in the field of technology.

Conclusion: Yao-Hsiang Liang's passion for innovation, coupled with his technical acumen and collaborative approach, has solidified his position as a trailblazer in the world of technology, inspiring the next generation of inventors and innovators.

Profile summary based on public USPTO records.

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