The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 26, 2021

Filed:

Jul. 30, 2018
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Yin-Shuo Chu, Taichung, TW;

Chi-Chung Yu, Tainan, TW;

Li-Yen Fang, Tainan, TW;

Tain-Shang Chang, Tainan, TW;

Yao-Hsiang Liang, Shinchu, TW;

Min-Chih Tsai, Yilan County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 21/02 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1462 (2013.01); H01L 27/1464 (2013.01); H01L 27/1469 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14632 (2013.01); H01L 27/14636 (2013.01); H01L 27/14687 (2013.01); H01L 27/14689 (2013.01); H01L 27/14612 (2013.01); H01L 27/14645 (2013.01); H01L 27/14685 (2013.01); H01L 27/14698 (2013.01);
Abstract

A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes an interconnect structure formed over a substrate and a passivation layer formed over the interconnect structure. The semiconductor device structure also includes an anti-acid layer formed in the passivation layer and a bonding layer formed on the anti-acid layer and the passivation layer. The anti-acid layer has a thickness that is greater than about 140 nm.


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