Taiwan Semiconductor Manufacturing Comp. Ltd.

Yao-Hsiang Liang

Jung-Chih Tsao

Chi-Ming Lu

Chih-Chang Huang

Chih-Hui Huang

Li-Yen Fang

Yu-Ku Lin

Jun-Nan Nian

Jian-Ming Chen

Yu-Hung Lin

Sheng-Chan Li

Yu-Min Chang

Hung-Chih Wang

Ching-Ho Hsu

Ting-Chun Wang

Yu-Ren Peng

Chi-Yu Chou

Chih-I Peng

Kuei-Pin Lee

Ming-Ching Chung

Chen-Kuang Lien

Yu-Chia Chang

Wen-Ten Chen

Yu-Chang Hsiao

Han-Chieh Huang

Shiu-Ko JangJian

Shih-Chi Lin

Ching-Fu Yeh

Jian-Shin Tsai

Shiu-Ko Jangjian

Hsueh-Han Lu

Tain-Shang Chang

Kevin Lai

Chi-Chung Yu

Chun-I Liao

Min-Chih Tsai

Chun-Ju Wu

Yin-Shuo Chu

Hsin-Chen Tsai

Embodiments of the present disclosure relate to methods of fabricating conductive features to prevent metal extrusion. Particularly, the conductive feature includes a control layer to reduce grain size of a metal containing layer, thus obtaining a robust structure to decrease extrusion defects. In some embodiments, the control layer is formed between a barrier layer and the conductive feature. In some embodiments, the control layer is formed by adding a control element, such as oxygen, to an upper portion of the barrier layer.

Conductive structures and methods of fabrication thereof

A semiconductor device includes a first interlayer dielectric (ILD) layer disposed over a substrate, a control layer disposed over the first ILD layer and containing silicon and oxygen, and a resistor wire disposed over the control layer. An oxygen concentration of the control layer is greater than an oxygen concentration of the first ILD layer.

Method of manufacturing semiconductor devices and semiconductor devices

A method of fabricating a semiconductor device includes forming a first film having a first film stress type and a first film stress intensity over a substrate and forming a second film having a second film stress type and a second film stress intensity over the first film. The second film stress type is different than the first film stress type. The second film stress intensity is about same as the first film stress intensity. The second film compensates stress induced effect of non-flatness of the substrate by the first film.

Method of forming semiconductor device

A method of forming a semiconductor device, comprising: forming a first conductive layer on an active device of a substrate; forming a dielectric layer on the first conductive layer; forming a through hole passing through the dielectric layer to expose a portion of the first conductive layer; conformally depositing a glue layer in the through hole to cover the portion of the first conductive layer comprising: forming a plurality of isolated lattices in an amorphous region at which the isolated lattices are uniformly distributed and extend from a top surface of the glue layer and terminate prior to reach a bottom of the glue layer, wherein the glue layer has a predetermined thickness; depositing a conductive material on the glue layer within the through hole, thereby forming a contact via; and forming a second conductive layer on the contact via over the first conductive layer.

Method for forming titanium nitride barrier with small surface grains in interconnects

A method for performing an electrochemical plating (ECP) process includes contacting a surface of a substrate with a plating solution comprising ions of a metal to be deposited, electroplating the metal on the surface of the substrate, in situ monitoring a plating current flowing through the plating solution between an anode and the substrate immersed in the plating solution as the ECP process continues, and adjusting a composition of the plating solution in response to the plating current being below a critical plating current such that voids formed in a subset of conductive lines having a highest line-end density among a plurality of conductive lines for a metallization layer over the substrate are prevented.

Method for controlling electrochemical deposition to avoid defects in interconnect structures

Some embodiments of the present disclosure provide a back side illuminated (BSI) image sensor. The back side illuminated (BSI) image sensor includes a semiconductive substrate and an interlayer dielectric (ILD) layer at a front side of the semiconductive substrate. The ILD layer includes a dielectric layer over the semiconductive substrate and a contact partially buried inside the semiconductive substrate. The contact includes a silicide layer including a predetermined thickness proximately in a range from about 600 angstroms to about 1200 angstroms.

Image sensing device and manufacturing method thereof

A method of forming a deep trench isolation in a radiation sensing substrate includes: forming a trench in the radiation sensing substrate; forming a corrosion resistive layer in the trench, in which the corrosion resistive layer includes titanium carbon nitride having a chemical formula of TiCN, and x is in a range of 0.1 to 0.9; and filling a reflective material in the trench and over the corrosion resistive layer.

Method of forming deep trench isolation in radiation sensing substrate and image sensor device

A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes an interconnect structure formed over a substrate and a passivation layer formed over the interconnect structure. The semiconductor device structure also includes an anti-acid layer formed in the passivation layer and a bonding layer formed on the anti-acid layer and the passivation layer. The anti-acid layer has a thickness that is greater than about 140 nm.

Semiconductor device structure with anti-acid layer and method for forming the same

A method of manufacturing a semiconductor structure includes receiving a substrate including a first side and a second side opposite to the first side; forming a recess extending between the first side and the second side; and disposing a conductive material in the recess to form a conductive via, wherein the conductive via includes an interface, a first portion adjacent to the first side and a second portion adjacent to the second side, the interface is disposed between the first portion and the second portion, an average grain size of the first portion is substantially different from an average grain size of the second portion.

Method of manufacturing semiconductor structure

A semiconductor device includes a substrate, a dielectric layer disposed on the substrate, and a conductive stack disposed within the dielectric layer. The conductive stack includes at least one first conductive layer, a second conductive layer disposed over the at least one first conductive layer, and a contact structure disposed between the at least one first conductive layer and the second conductive layer. The contact structure includes a contact via electrically connecting the at least one first conductive layer to the second conductive layer, and a glue layer conformal to sidewalls and a bottom surface of the contact via. The glue layer has isolated lattices and an amorphous region at which the isolated lattices are uniformly distributed.

Semiconductor device and method of forming the same

Semiconductor device having stress-neutralized film stack and method of fabricating same

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Hsinchu, Taiwan

Yao-Hsiang Liang