The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Jun. 10, 2022
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Jun-Nan Nian, Tainan, TW;
Yao-Hsiang Liang, Hsinchu, TW;
Ju PO Tung, Tainan, TW;
Chieh-Min Liu, Tainan, TW;
Ming-Ching Chung, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
The present disclosure provides a semiconductor structure. The semiconductor structure includes: a substrate; a transistor on the substrate; a first dielectric layer over the transistor; a second dielectric layer over the first dielectric layer; a barrier layer extending from the second dielectric layer to the first dielectric layer; and a conductive structure separated from the second dielectric layer and the first dielectric layer by the barrier layer. The barrier layer includes: a first layer, including titanium or tantalum along inner sidewalls of the first dielectric layer and the second dielectric layer; a second layer, being an oxide of titanium or tantalum and over the first layer; and a third layer, including cobalt and over the second layer.