The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 15, 2020

Filed:

Sep. 06, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Li-Yen Fang, Tainan, TW;

Chih-Chang Huang, Chiayi, TW;

Jung-Chih Tsao, Tainan, TW;

Yao-Hsiang Liang, Hsinchu, TW;

Yu-Ku Lin, Tainan, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 25/065 (2006.01); H01L 27/146 (2006.01); H01L 25/10 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/76898 (2013.01); H01L 23/53238 (2013.01); H01L 25/0657 (2013.01); H01L 25/10 (2013.01); H01L 27/14636 (2013.01); H01L 27/14687 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16225 (2013.01); H01L 2924/15311 (2013.01);
Abstract

A method of manufacturing a semiconductor structure includes receiving a substrate including a first side and a second side opposite to the first side; forming a recess extending between the first side and the second side; and disposing a conductive material in the recess to form a conductive via, wherein the conductive via includes an interface, a first portion adjacent to the first side and a second portion adjacent to the second side, the interface is disposed between the first portion and the second portion, an average grain size of the first portion is substantially different from an average grain size of the second portion.


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