Yanping Ma

Title: **Innovative Contributions of Yanping Ma in GaN Transistor Technology**

Introduction

Yanping Ma, an accomplished inventor based in Torrance, CA, holds an impressive portfolio of 10 patents that showcase her significant contributions to the field of semiconductor technology. Her latest innovations focus on the development of Gallium Nitride (GaN) transistors integrated with polysilicon layers, which enhance the capabilities of integrated circuits.

Latest Patents

Among her notable patents is a groundbreaking approach to GaN transistors that utilize polysilicon layers for creating additional components within integrated circuits. This advanced GaN device is characterized by its epitaxial (EPI) structure, topped with an insulating material. The unique design incorporates one or more polysilicon layers embedded in the insulating material, each featuring regions that are both n-type and p-type. This innovation further includes strategically placed metal interconnects and vias that link the source and drain metals to the polysilicon layer's n-type and p-type regions, paving the path for improved performance in electronic applications.

Career Highlights

Yanping Ma's professional journey includes pivotal roles at Efficient Power Conversion Corporation and International Rectifier Corporation. Her work at these leading companies has positioned her as a notable figure in the semiconductor industry, where her exceptional skills in innovation have led to the creation of cutting-edge technologies.

Collaborations

Throughout her career, Yanping has collaborated with esteemed colleagues such as Jianjun Cao and Robert A. Beach. These partnerships have fostered an environment of creativity and innovation, contributing to the advancement of semiconductor technology and enhancing the functionality of electronic devices.

Conclusion

Yanping Ma's contributions to the field of GaN transistor technology exemplify her innovative spirit and dedication to advancing electronic components. With a focus on integrating polysilicon layers into semiconductor devices, she continues to push the boundaries of technology, paving the way for future advancements in integrated circuits. Her numerous patents not only reflect her expertise as an inventor but also her commitment to technological progress in the semiconductor industry.