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For the Inventor, By the Inventor

Portland, OR, United States of America

Yan A Borodovsky

USPTO Granted Patents = 34 

Average Co-Inventor Count = 1.8

ph-index = 8

Forward Citations = 262(Granted Patents)


Company Filing History:

goldMedal33 out of 54,664 
 
Intel Corporation
 patents
silverMedal1 out of 1 
 
Ateoq Corporation
 patent

Years Active: 1988-2020

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34 patents (USPTO):
1. 10747115 - Cross scan proximity correction with ebeam universal cutter (2020-08-18),
2. 10578970 - Ebeam universal cutter (2020-03-03),
3. 10386722 - Ebeam staggered beam aperture array (2019-08-20),
4. 10338474 - Underlying absorbing or conducting layer for Ebeam direct write (EBDW) lithography (2019-07-02),
5. 10290528 - Ebeam align on the fly (2019-05-14),
6. 10236161 - Fine alignment system for electron beam exposure system (2019-03-19),
7. 10216087 - Ebeam universal cutter (2019-02-26),
8. 10191376 - Cross scan proximity correction with ebeam universal cutter (2019-01-29),
9. 10067416 - Ebeam three beam aperture array (2018-09-04),
10. 10014256 - Unidirectional metal on layer with ebeam (2018-07-03),
11. 9952511 - Ebeam non-universal cutter (2018-04-24),
12. 9899182 - Corner rounding correction for electron beam (Ebeam) direct write system (2018-02-20),
13. 9897908 - Ebeam three beam aperture array (2018-02-20),
14. 9324652 - Method of creating a maskless air gap in back end interconnections with double self-aligned vias (2016-04-26),
15. 8975138 - Method of creating a maskless air gap in back end interconnects with double self-aligned vias (2015-03-10),

Title: Yan A Borodovsky: Innovator in E-Beam Lithography

Introduction:

Yan A Borodovsky, based in Portland, OR, is a distinguished inventor known for his significant contributions to the field of lithographic apparatuses and methodologies involving complementary e-beam lithography (CEBL). With a remarkable portfolio comprising 34 patents, Borodovsky continues to push the boundaries of innovation and technology in the industry.

Latest Patents:

Among his latest patents are advancements in cross-scan proximity correction with ebeam universal cutters. These technologies describe methodologies for lithographic apparatuses suitable for CEBL. An example patent outlines a column for an e-beam direct write lithography tool, featuring a first blanker aperture array (BAA) with staggered openings arranged in a specific pitch. This array direction is orthogonal to the scanning direction, optimizing the performance of e-beam tools. Another noteworthy patent details a BAA that includes staggered openings in two columns, enhancing the precision and resolution required in e-beam lithography applications.

Career Highlights:

Borodovsky's career encompasses significant roles at prominent companies, notably at Intel Corporation and Ateoq Corporation, where he has applied his expertise to develop innovative lithographic technologies. His work has not only propelled his career but has also significantly influenced the semiconductor industry.

Collaborations:

Throughout his career, Yan A Borodovsky has collaborated with esteemed colleagues, including Donald W Nelson and Mark C Phillips. These partnerships have facilitated the exchange of ideas and fostered advancements in the technologies they have developed together.

Conclusion:

Yan A Borodovsky stands out as a pivotal figure in the world of innovations in e-beam lithography. With his extensive patent portfolio and collaborative efforts, he continues to pave the way for future advancements in the field, ensuring that his contributions will have a lasting impact on technology and industry developments.

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