The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2020

Filed:

Jan. 18, 2019
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Yan A. Borodovsky, Portland, OR (US);

Donald W. Nelson, Beaverton, OR (US);

Mark C. Phillips, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01J 37/302 (2006.01); H01J 37/317 (2006.01); H01J 37/04 (2006.01);
U.S. Cl.
CPC ...
G03F 7/2037 (2013.01); H01J 37/045 (2013.01); H01J 37/3026 (2013.01); H01J 37/3174 (2013.01); H01J 37/3177 (2013.01); H01L 21/0277 (2013.01); H01L 21/31144 (2013.01); H01J 2237/0435 (2013.01); H01J 2237/0453 (2013.01); H01J 2237/303 (2013.01); H01J 2237/30422 (2013.01); H01J 2237/30438 (2013.01); H01J 2237/31762 (2013.01); H01J 2237/31764 (2013.01);
Abstract

Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings. The first and second columns of openings together form an array having a pitch in the first direction. A scan direction of the BAA is along a second direction, orthogonal to the first direction. The pitch of the array corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.


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