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For the Inventor, By the Inventor

Beaverton, OR, United States of America

Donald W Nelson

USPTO Granted Patents = 28 

 

Average Co-Inventor Count = 2.6

ph-index = 5

Forward Citations = 120(Granted Patents)


Location History:

  • Bloomington, MN (US) (1980)
  • Salina, KS (US) (1990)
  • Murrysville, PA (US) (2012)
  • Beaverton, OR (US) (2017 - 2022)

Company Filing History:

goldMedal25 out of 54,664 
 
Intel Corporation
 patents
silverMedal2 out of 832,680 
Other
 patents
where one patent can have more than one assignee

Years Active: 1980-2024

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28 patents (USPTO):
1. 12100762 - Wrap-around source/drain method of making contacts for backside metals (2024-09-24),
2. 12100761 - Wrap-around source/drain method of making contacts for backside metals (2024-09-24),
3. 11296197 - Power gate with metal on both sides (2022-04-05),
4. 11282861 - Dynamic logic built with stacked transistors sharing a common gate (2022-03-22),
5. 11264493 - Wrap-around source/drain method of making contacts for backside metals (2022-03-01),
6. 11049861 - Method, device and system to provide capacitance for a dynamic random access memory cell (2021-06-29),
7. 10892215 - Metal on both sides with power distributed through the silicon (2021-01-12),
8. 10700039 - Silicon die with integrated high voltage devices (2020-06-30),
9. 10658291 - Metal on both sides with clock gated-power and signal routing underneath (2020-05-19),
10. 10578970 - Ebeam universal cutter (2020-03-03),
11. 10490542 - Integrated circuit layout using library cells with alternating conductive lines (2019-11-26),
12. 10386722 - Ebeam staggered beam aperture array (2019-08-20),
13. 10361090 - Vertical channel transistors fabrication process by selective subtraction of a regular grid (2019-07-23),
14. 10332893 - Architecture to communicate signals for operating a static random access memory (2019-06-25),
15. 10325840 - Metal on both sides with power distributed through the silicon (2019-06-18),

Title: Innovations by Donald W. Nelson: A Glimpse into His Career and Patents

Introduction: Donald W. Nelson is a prominent inventor based in Beaverton, OR, recognized for his significant contributions to the field of technology. With an impressive portfolio of 25 patents, Nelson has made strides in developing innovative solutions that enhance electronic circuitry and semiconductor devices.

Latest Patents: Among his latest innovations is the "Wrap-around source/drain method of making contacts for backside metals." This invention presents an elaborate apparatus featuring a circuit structure with a device layer that includes multiple devices. It incorporates an electrically conductive contact connected to one of the devices on the first side and an interconnect on the second side that is coupled to the conductive contact. The method involves the formation of a transistor device, defining a channel between a source and a drain, contributing to the advancement of semiconductor technology.

Career Highlights: Donald W. Nelson has dedicated much of his career to Intel Corporation, one of the leading technology companies globally. His ongoing research and development efforts focus on improving circuit structures and device functionality, driving innovation within the semiconductor industry.

Collaborations: Throughout his career, Nelson has collaborated with notable colleagues such as Patrick R. Morrow and Kimin Jun. These partnerships foster an environment of shared knowledge and creativity, further enhancing the scope of his inventions and research outcomes.

Conclusion: Donald W. Nelson continues to be a significant force in the field of electronic and semiconductor innovations. His contributions are not only evident in his patents but also in the collaborative spirit he maintains with fellow inventors. As technology evolves, his work will undoubtedly inspire future advancements in the industry.

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