The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2022

Filed:

Dec. 26, 2015
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Donald W. Nelson, Beaverton, OR (US);

Rishabh Mehandru, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/538 (2006.01); H01L 27/12 (2006.01); H01L 21/822 (2006.01); H01L 21/8238 (2006.01); H01L 21/84 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1211 (2013.01); H01L 21/8221 (2013.01); H01L 21/823821 (2013.01); H01L 21/823828 (2013.01); H01L 21/845 (2013.01); H01L 27/0688 (2013.01);
Abstract

A dynamic logic circuit including a first transistor within a first device stratum of a substrate; and a second transistor within a second device stratum of the substrate that is different from the first device stratum, wherein the first transistor and the second transistor share a common gate electrode. A method including disposing a second semiconductor body of a second transistor on a first semiconductor body of a first transistor in a first device stratum on a substrate, the second semiconductor body defining a second device stratum; and forming a common gate electrode on each of the semiconductor body and the second semiconductor body.


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