The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2019
Filed:
Jun. 18, 2015
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Shakul Tandon, Hillsboro, OR (US);
Yan A. Borodovsky, Portland, OR (US);
Charles H. Wallace, Portland, OR (US);
Paul A. Nyhus, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/09 (2006.01); G03F 7/11 (2006.01); G03F 7/20 (2006.01); H01L 21/027 (2006.01); H01L 21/3213 (2006.01); H01L 21/311 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
G03F 7/2059 (2013.01); G03F 7/093 (2013.01); G03F 7/11 (2013.01); H01L 21/0277 (2013.01); H01L 21/32133 (2013.01); H01L 21/32139 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/823431 (2013.01);
Abstract
Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. Particular embodiments are directed to implementation of an underlying absorbing and/or conducting layer for ebeam direct write (EBDW) lithography.