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For the Inventor, By the Inventor

Hsinchu, Taiwan

Ya-Nan Mou

USPTO Granted Patents = 17 

Average Co-Inventor Count = 2.9

ph-index = 3

Forward Citations = 29(Granted Patents)


Location History:

  • Taipei, TW (1998 - 2000)
  • Hsinchu, TW (1999 - 2020)

Company Filing History:

goldMedal17 out of 7,074 
 
United Microelectronics Corp.
 patents

Years Active: 1998-2025

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17 patents (USPTO):Explore Patents
1. 12237027 - Anti-fuse memory (2025-02-25),
2. 10777260 - Static random access memory (2020-09-15),
3. 10580499 - Read only memory (2020-03-03),
4. 10095251 - Voltage regulating circuit (2018-10-09),
5. 9571079 - Integrated circuit and signal monitoring method thereof (2017-02-14),
6. 9263134 - Non-volatile memory which can increase the operation window (2016-02-16),
7. 9160352 - Phase-locked loop and method for controlling the same (2015-10-13),
8. 8873295 - Memory and operation method thereof (2014-10-28),
9. 8804440 - Memory for a voltage regulator circuit (2014-08-12),
10. 8767485 - Operation method of a supply voltage generation circuit used for a memory array (2014-07-01),
11. 8724404 - Memory, supply voltage generation circuit, and operation method of a supply voltage generation circuit used for a memory array (2014-05-13),
12. 8421509 - Charge pump circuit with low clock feed-through (2013-04-16),
13. 7274085 - Capacitor structure (2007-09-25),
14. 6028341 - Latch up protection and yield improvement device for IC array (2000-02-22),
15. 5973510 - I/O interface for multilevel circuits (1999-10-26),

Title: The Innovations of Ya-Nan Mou

Introduction

Ya-Nan Mou is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of memory technology, holding a total of 17 patents. His work has advanced the development of various memory systems, showcasing his expertise and innovative spirit.

Latest Patents

One of Mou's latest patents is related to anti-fuse memory technology. This invention includes an anti-fuse memory cell that features an isolation structure, a select gate, first and second gate insulating layers, an anti-fuse gate, and first, second, and third doped regions. The design ensures efficient operation by strategically placing these components within a substrate. Another notable patent is for static random access memory (SRAM). This SRAM cell comprises two inverters and three transistors, which work together to enhance data storage and retrieval processes.

Career Highlights

Ya-Nan Mou is currently employed at United Microelectronics Corporation, a leading semiconductor company. His role at the company allows him to apply his innovative ideas and contribute to cutting-edge technology in the semiconductor industry.

Collaborations

Mou has collaborated with several talented individuals, including Chung-Cheng Tsai and Yuan-Hui Chen. These partnerships have fostered a creative environment that encourages the exchange of ideas and advancements in technology.

Conclusion

Ya-Nan Mou's contributions to memory technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced memory systems, making a lasting impact on the industry.

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