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For the Inventor, By the Inventor

Hohenthann, Germany

Wolfgang Krautschneider

This inventor holds 45 USPTO granted patents and 5 EPO patents, primarily in Memory Cell Technology. Top assignees: Siemens Aktiengesellschaft, Infineon Technologies Ag, Technische Universitat Hamburg. Active years: 1994-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wolfgang Krautschneider. Retrieved from https://idiyas.com/inventor/wolfgang-krautschneider

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 45

% Patents Active = 95.6

 

Average Co-Inventor Count = 3.1

ph-index = 16

Forward Citations = 1,311(Granted Patents)


Location History:

  • Ottbrunn, DE (1994)
  • Ottobrunn, DE (1995)
  • Hohenthann, DE (1998 - 2003)
  • Hamburg, DE (2001 - 2021)

Company Filing History:

goldMedal33 out of 30,886 
 
Siemens Aktiengesellschaft
 patents
silverMedal11 out of 15,036 
 
Infineon Technologies Ag
 patents
bronzeMedal1 out of 4 
 
Technische Universitat Hamburg
 patents
4. 1 out of 1 
 
Universitätsklinikum Hambrug-Eppendorf (Uke)
 patent
where one patent can have more than one assignee

Years Active: 1994-2021

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Areas of Expertise:
Memory Cell
DRAM
CMOS Circuit
In-Situ Sensor
Transistor
Capacitor
Memory Arrangement
Storage Cell
Programmable Memory
Vertical MOS Transistor
Integrated Circuit
Fabrication Method
45 patents (USPTO):Explore Patents
1. 10881297 - In-situ sensor (2021-01-05),
2. 7030434 - Arrangement with image sensors (2006-04-18),
3. 6593614 - Integrated circuit configuration having at least one transistor and one capacitor, and method for fabricating it (2003-07-15),
4. 6576948 - Integrated circuit configuration and method for manufacturing it (2003-06-10),
5. 6534820 - Integrated dynamic memory cell having a small area of extent, and a method for its production (2003-03-18),
6. 6521935 - Mos transistor and dram cell configuration (2003-02-18),
7. 6518628 - Integrated CMOS circuit configuration, and production of same (2003-02-11),
8. 6475866 - Method for production of a memory cell arrangement (2002-11-05),
9. 6445046 - Memory cell arrangement and process for manufacturing the same (2002-09-03),
10. 6442065 - Method for operating a memory cell configuration having dynamic gain memory cells (2002-08-27),
11. 6438022 - Memory cell configuration (2002-08-20),
12. 6399433 - Method for fabricating a memory cell (2002-06-04),
13. 6274453 - Memory cell configuration and production process therefor (2001-08-14),
14. 6274431 - Method for manufacturing an integrated circuit arrangement having at least one MOS transistor (2001-08-14),
15. 6265748 - Storage cell arrangement in which vertical MOS transistors have at least three different threshold voltages depending on stored data, and method of producing said arrangement (2001-07-24),

Title: **Wolfgang Krautschneider: Innovator in Sensor Technology**

Introduction

Wolfgang Krautschneider, a prominent inventor based in Hohenthann, Germany, holds an impressive portfolio of 45 patents. Renowned for his contributions to sensor technology, he has significantly advanced the field through innovative inventions that cater to various applications, particularly in the medical and imaging sectors.

Latest Patents

One of his latest inventions is an In-situ Sensor designed for implantation within the tissue of mammals. This groundbreaking device includes an energy harvesting portion, a communication portion, a pressure sensor for measuring interstitial pressure, and an additional sensor from a diverse group that encompasses pH, lactate, impedance, radiation, temperature sensors, and bioelectrical potential sensors. The design allows for efficient communication of the pressure and measurement data to an extracorporeal receiving entity while optimizing energy consumption.

Another notable invention involves an arrangement with image sensors. This patent details a unique connection between a memory transistor and a selection transistor within an image sensor. The configuration allows for innovative data processing by utilizing a diode and photodiode in a manner that enhances the performance of the sensor, ensuring that it operates effectively while managing energy levels.

Career Highlights

Krautschneider has had an illustrious career, marked by his tenure at leading technology firms such as Siemens Aktiengesellschaft and Infineon Technologies AG. His work in these organizations has been pivotal in advancing sensor technology and contributing to the development of practical applications that enhance everyday life.

Collaborations

Throughout his career, Wolfgang has collaborated with esteemed colleagues, including Franz Hofmann and Lothar Risch. These partnerships have fostered a creative and innovative environment, allowing for the exchange of ideas and the acceleration of technological advancements.

Conclusion

Wolfgang Krautschneider's contributions to the field of sensor technology exemplify the power of innovation and collaboration. His patents not only reflect his expertise but also his dedication to improving technology for medical and imaging applications. As his career progresses, it will be exciting to see how his inventions continue to shape the industry and influence future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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