The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2002
Filed:
Jan. 31, 2001
Franz Hofmann, München, DE;
Wolfgang Krautschneider, Hamburg, DE;
Till Schlösser, München, DE;
Josef Willer, Riemerling, DE;
Infineon Technologies AG, Muenchen, DE;
Abstract
A method for producing a storage cell includes forming a polycrystalline silicon layer on a semiconductor body having at least one selection transistor disposed in a first plane. An interspace is formed between two adjacent structures of the layer and one of the adjacent structures of the layer is placed on a surface of a first silicon plug. A cell plate electrode is formed in the interspace and a trench is formed in the layer. The trench reaches as far as the first plug surface and is filled with an insulating layer. The-layer is removed. A storage capacitor having a high-epsilon or ferroelectric dielectric and a storage node electrode is formed. The capacitor is disposed in a second plane in and above the body. The insulating layer is replaced with silicon to form a second silicon plug directly connected to the first plug. The second plug is electrically connected to the storage node electrode, and the first plane is electrically connected to the second plane through the first and second plugs.