The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2003
Filed:
Jun. 04, 2001
Franz Hofmann, München, DE;
Wolfgang Krautschneider, Hamburg, DE;
Till Schlösser, Dresden, DE;
Josef Willer, Riemerling, DE;
Infineon Technologies AG, Munich, DE;
Abstract
An integrated circuit contains a planar first transistor and a diode. The diode is connected between a first source/drain region of the first transistor and a gate electrode of the first transistor such that a charge is impeded from discharging from the gate electrode to the first source/drain region. A diode layer that is part of the diode is disposed on a portion of the first source/drain region. A conductive structure that is an additional part of the diode is disposed above a portion of the gate electrode and is disposed on the diode layer. The diode can be configured as a tunnel diode. The diode layer can be produced by thermal oxidation. Only one mask is required for producing the diode. A capacitor can be disposed above the diode. The first capacitor electrode of the capacitor is connected to the conductive structure.