The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 18, 2006

Filed:

Sep. 28, 2000
Applicants:

Wolfgang Krautschneider, Hamburg, DE;

Heribert Geib, Grafing, DE;

Franz Hofmann, München, DE;

Till Schlösser, Dresden, DE;

Inventors:

Wolfgang Krautschneider, Hamburg, DE;

Heribert Geib, Grafing, DE;

Franz Hofmann, München, DE;

Till Schlösser, Dresden, DE;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/062 (2006.01); H01L 31/113 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory transistor and a selection transistor of an image sensor are connected in series and between a bit line (B) and a reference line (R). A gate electrode of the selection transistor is connected to a word line (W), which extends crosswise in relation to the bit line (B). A diode of the image sensor is switched between a gate electrode (G) of the memory transistor and a first source/drain area (S/D) of the memory transistor, which is connected to the selection transistor in such a way is polarized towards the first source/drain area (S/D) of the memory transistor and in the reverse direction. A photodiode of the image sensor is switched between a voltage connection and either the gate electrode (G) of the memory transistor or the first source/drain area (S/D) of the memory transistor in such a way that it is polarized towards the voltage connection and in the reverse direction.


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