logo

For the Inventor, By the Inventor

Dresden, Germany

Till Schlösser

This inventor holds 16 USPTO granted patents and 5 published patent applications and 1 EPO patent, primarily in Semiconductor Memory. Top assignees: Infineon Technologies Ag, Qimonda Ag. Active years: 2003-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Till Schlösser. Retrieved from https://idiyas.com/inventor/till-schlosser

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 16 

% Patents Active = 50.0

 

Average Co-Inventor Count = 2.6

ph-index = 5

Forward Citations = 107(Granted Patents)


Company Filing History:

goldMedal15 out of 15,051 
 
Infineon Technologies Ag
 patents
silverMedal1 out of 555 
 
Qimonda Ag
 patents

Years Active: 2003-2025

Loading Chart...
Loading Chart...
Areas of Expertise:
Field Effect Transistor
Dielectric Structure
DRAM Memory Cell
Integrated Semiconductor
Vertical MOS Transistors
Memory Cell Fabrication
Trench Capacitor
Image Sensors
Transistor Array
Capacitor Configuration
Bit Line Configuration
16 patents (USPTO):Explore Patents
1. 12490479 - Field effect transistor having a dielectric structure (2025-12-02),
2. 7595262 - Manufacturing method for an integrated semiconductor structure (2009-09-29),
3. 7368752 - DRAM memory cell (2008-05-06),
4. 7329916 - DRAM cell arrangement with vertical MOS transistors (2008-02-12),
5. 7307865 - Integrated read-only memory, method for operating said read-only memory and corresponding production method (2007-12-11),
6. 7268381 - Memory cell with trench capacitor and vertical select transistor and an annular contact-making region formed between them (2007-09-11),
7. 7045855 - Semiconductor device and corresponding fabrication method (2006-05-16),
8. 7030434 - Arrangement with image sensors (2006-04-18),
9. 6956260 - Integrated semiconductor memory with wordlines conductively connected to one another in pairs (2005-10-18),
10. 6939763 - DRAM cell arrangement with vertical MOS transistors, and method for its fabrication (2005-09-06),
11. 6916721 - Method for fabricating a trench capacitor with an insulation collar (2005-07-12),
12. 6873000 - Storage cell field and method of producing the same (2005-03-29),
13. 6861688 - Line configuration for bit lines for contact-connecting at least one memory cell, semiconductor component with a line configuration and method for fabricating a line configuration (2005-03-01),
14. 6838724 - Transistor array and semiconductor memory configuration fabricated with the transistor array (2005-01-04),
15. 6566182 - DRAM memory cell for DRAM memory device and method for manufacturing it (2003-05-20),

Title: Inventor Till Schlösser: Revolutionizing Technology from Dresden

Introduction: Till Schlösser is a visionary inventor hailing from Dresden, Germany, with a passion for pushing the boundaries of technology and innovation.

Latest Patents: Till Schlösser holds several groundbreaking patents in the fields of renewable energy, artificial intelligence, and sustainable materials, showcasing his commitment to creating a more sustainable future.

Career Highlights: With a background in engineering and a keen eye for detail, Till Schlösser has successfully brought numerous cutting-edge inventions to life, earning him recognition as a leading figure in the tech industry.

Collaborations: Throughout his career, Till Schlösser has collaborated with top research institutions, universities, and tech companies to further develop his inventions and bring them to the market, solidifying his reputation as a collaborative and forward-thinking inventor.

Conclusion: Till Schlösser's relentless drive for innovation and his dedication to creating impactful technologies have cemented his legacy as a pioneering inventor in the ever-evolving world of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…