The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2005
Filed:
Oct. 07, 2002
Matthias Goldbach, Dresden, DE;
Till Schlösser, Dresden, DE;
Matthias Goldbach, Dresden, DE;
Till Schlösser, Dresden, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A storage cell field has a plurality of storage cells formed in a substrate of a first doping type, said storage cells comprising a trench capacitor arranged in said substrate and a selection transistor associated with said trench capacitor and provided with a transistor body which is arranged in said substrate. An implantation having an increased dopant concentration of the first doping type is provided in said substrate. This implantation prevents space-charge zones, which are located at the trench capacitors and which are caused in predetermined storage states of said trench capacitors, from constricting a substrate region, which is available for applying a predetermined potential to the transistor bodies, in such a way that said predetermined potential cannot be applied.