The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2003
Filed:
Nov. 20, 2000
Franz Hofmann, München, DE;
Wolfgang Krautschneider, Hohenthann, DE;
Infineon-Technologies AG, Munich, DE;
Abstract
A patterned conductive layer and a structure via which a transistor can be driven, e.g. a word line, are disposed one above the other. A vertical conductive structure, e.g. a spacer, connects a first source/drain region of the transistor to the conductive layer, with which it forms a first capacitor electrode which has a large effective area in conjunction with a high packing density. A capacitor dielectric is disposed over the vertical conductive structure and the conductive layer, and a second capacitor electrode is disposed over the capacitor dielectric. The vertical conductive structure may be disposed on a first sidewall of the first source/drain region and a gate electrode of the transistor may be disposed on an adjoining second sidewall of the first source/drain region. The circuit configuration may form a DRAM cell configuration.