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For the Inventor, By the Inventor

Rochester, NY, United States of America

Wendy G Ahearn

USPTO Granted Patents = 17 

 

Average Co-Inventor Count = 3.9

ph-index = 4

Forward Citations = 37(Granted Patents)


Company Filing History:

goldMedal13 out of 21,594 
 
Eastman-kodak Company
 patents
silverMedal4 out of 17 
 
Natcore Technology, Inc.
 patents

Years Active: 2008-2016

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17 patents (USPTO):Explore Patents
1. 9449824 - Method for patterned doping of a semiconductor (2016-09-20),
2. 9324899 - Emitter diffusion conditions for black silicon (2016-04-26),
3. 9306094 - System and method for black silicon etching utilizing thin fluid layers (2016-04-05),
4. 9236509 - Solar cells with patterned antireflective surfaces (2016-01-12),
5. 8692238 - Semiconductor devices and methods of preparation (2014-04-08),
6. 8530270 - Methods of preparing semiconductive compositions and devices (2013-09-10),
7. 8450726 - Articles containing coatings of amic acid salts (2013-05-28),
8. 8431433 - Methods of providing semiconductor layers from amic acid salts (2013-04-30),
9. 8411489 - Semiconducting devices and methods of preparing (2013-04-02),
10. 8404892 - Aromatic amic acid salts and compositions (2013-03-26),
11. 8314265 - Aromatic amic acids or amic esters and compositions (2012-11-20),
12. 7858970 - Heterocycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors (2010-12-28),
13. 7807994 - N-type semiconductor materials for thin film transistors (2010-10-05),
14. 7804087 - Configurationally controlled N,N'-Dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors (2010-09-28),
15. 7781076 - Heteropyrene-based semiconductor materials for electronic devices and methods of making the same (2010-08-24),

Title: Wendy G Ahearn: Innovator in Semiconductor Doping Technologies

Introduction

Wendy G Ahearn is a prominent inventor based in Rochester, NY (US), known for her significant contributions to semiconductor doping technologies. With a total of 17 patents to her name, Ahearn has made remarkable advancements in the field, particularly in methods that enhance the efficiency of solar cells.

Latest Patents

Among her latest patents is a method for patterned doping of a semiconductor. This innovative approach allows for improved control of doping concentrations on a substrate. The method involves printing a polymeric material on a substrate in a desired pattern and depositing a barrier layer using a liquid phase deposition process. This barrier layer effectively prevents or reduces doping of the substrate, enabling the formation of patterned doping regions. Additionally, Ahearn has developed emitter diffusion conditions for black silicon, which optimize the doping process during solar cell manufacturing. This method minimizes the formation of dead zones that can occur due to excessive doping, thereby enhancing the overall efficiency of solar cells.

Career Highlights

Wendy G Ahearn has worked with notable companies such as Eastman Kodak Company and Natcore Technology, Inc. Her experience in these organizations has contributed to her expertise in semiconductor technologies and innovation.

Collaborations

Throughout her career, Ahearn has collaborated with talented individuals, including Deepak Shukla and Dianne Marie Meyer. These partnerships have fostered a creative environment that has led to significant advancements in her field.

Conclusion

Wendy G Ahearn's contributions to semiconductor doping technologies have established her as a leading inventor in the industry. Her innovative methods continue to influence the efficiency of solar cells and semiconductor applications.

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