The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
Jun. 09, 2015
Wendy G. Ahearn, Rochester, NY (US);
David Howard Levy, Rochester, NY (US);
Richard W. Topel, Jr., Rochester, NY (US);
Theodore Zubil, Honeoye Falls, NY (US);
Wendy G. Ahearn, Rochester, NY (US);
David Howard Levy, Rochester, NY (US);
Richard W. Topel, Jr., Rochester, NY (US);
Theodore Zubil, Honeoye Falls, NY (US);
Natcore Technology, Inc., Rochester, NY (US);
Abstract
In some cases, it is desirable to perform doping when manufacturing a solar cell to improve efficiency. Dopant diffusion may include the steps of: (a) an initial temperature ramp, (b) dopant vapor flow, (c) drive-in, and (d) cool down. However, doping may result in excessive doping, such as in regions where the solar cell has been nanoscale textured to provide black silicon, thereby creating a dead zone with excessive recombination of charge carriers. In the systems and method discussed herein, dopant vapor flow and drive-in steps may be performed at two different temperature set points to minimize or eliminate the formation of dead zones. In some embodiments, the dopant vapor flow may be performed at a lower temperature set point than the drive-in.