The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2010
Filed:
Aug. 21, 2009
Deepak Shukla, Webster, NY (US);
Diane C. Freeman, Pittsford, NY (US);
Shelby F. Nelson, Pittsford, NY (US);
Jeffrey T. Carey, Victor, NY (US);
Wendy G. Ahearn, Rochester, NY (US);
Deepak Shukla, Webster, NY (US);
Diane C. Freeman, Pittsford, NY (US);
Shelby F. Nelson, Pittsford, NY (US);
Jeffrey T. Carey, Victor, NY (US);
Wendy G. Ahearn, Rochester, NY (US);
Eastman Kodak Company, Rochester, NY (US);
Abstract
A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, an aromatic moiety, at least one of which moieties is substituted with at least one electron donating group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.