Eastman-kodak Company

Natcore Technology, Inc.

Wendy G Ahearn

Deepak Shukla

Dianne Marie Meyer

David Howard Levy

Richard W Topel, Jr

Theodore Zubil

Jeffrey T Carey

Shelby Forrester Nelson

Thomas R Welter

Diane Carol Freeman

Douglas Robert Robello

Dennis J Flood

Daniele Margadonna

Mark R Mis

Manju Rajeswaran

Ann L Carroll-Lee

Jeffrey Todd Carey

Thomas Robert Welter

A method for an improved doping process allows for improved control of doping concentrations on a substrate. The method may comprise printing a polymeric material on a substrate in a desired pattern; and depositing a barrier layer on the substrate with a liquid phase deposition process, wherein a pattern of the barrier layer is defined by the polymeric material. The method further comprises removing the polymeric material, and doping the substrate. The barrier layer substantially prevents or reduces doping of the substrate to allow patterned doping regions to be formed on the substrate. The method can be repeated to allow additional doping regions to be formed on the substrate.

Method for patterned doping of a semiconductor

In some cases, it is desirable to perform doping when manufacturing a solar cell to improve efficiency. Dopant diffusion may include the steps of: (a) an initial temperature ramp, (b) dopant vapor flow, (c) drive-in, and (d) cool down. However, doping may result in excessive doping, such as in regions where the solar cell has been nanoscale textured to provide black silicon, thereby creating a dead zone with excessive recombination of charge carriers. In the systems and method discussed herein, dopant vapor flow and drive-in steps may be performed at two different temperature set points to minimize or eliminate the formation of dead zones. In some embodiments, the dopant vapor flow may be performed at a lower temperature set point than the drive-in.

Emitter diffusion conditions for black silicon

Systems and methods for etching the surface of a substrate may utilize a thin layer of fluid to etch a substrate for improved anti-reflective properties. The substrate may be secured with a holding fixture that is capable of positioning the substrate. A fluid comprising an acid and an oxidizer for etching may be prepared, which may optionally include a metal catalyst. An amount of fluid necessary to form a thin layer contacting the surface of the substrate to be etched may be dispensed. The fluid may be spread into the thin layer utilizing a tray that the substrate is dipped into, a plate that is placed near the surface of the substrate to be etched, or a spray or coating device.

System and method for black silicon etching utilizing thin fluid layers

Systems and methods for producing nanoscale textured low reflectivity surfaces may be utilized to fabricate solar cells. A substrate may be patterned with a resist prior to an etching process that produces a nanoscale texture on the surface of the substrate. Additionally, the substrate may be subjected to a dopant diffusion process. Prior to dopant diffusion, the substrate may be optionally subjected to liquid phase deposition to deposit a material that allows for patterned doping. The order of the nanoscale texture etching and dopant diffusion may be modified as desired to produce post-nano emitters or pre-nano emitters.

Solar cells with patterned antireflective surfaces

An organic film-forming polymer has a Tof at least 70&#xb0; C. and comprises a backbone comprising recurring units of Structure (A) shown in this application. These organic film-forming polymers can be used as dielectric materials in various devices with improved properties such as improved mobility.

Semiconductor devices and methods of preparation

An amic acid or amic ester precursor can be applied to a substrate and thermally converted into a semiconducting layer of the corresponding arylene diimide. This semiconducting thin film can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimide need not be coated but is generated in situ from a solvent-soluble, easily coated precursor compound.

Methods of preparing semiconductive compositions and devices

An article includes a flexible or rigid substrate and dry layer comprising an aromatic, non-polymeric amic acid salt that can be thermally converted to a corresponding arylene diimide. Upon conversion of the aromatic, non-polymeric amic acid salt, the dry layer has semiconductive properties and can be used in various devices including thin-film transistor devices.

Articles containing coatings of amic acid salts

A semiconductor layer and device can be provided using a method including thermally converting an aromatic, non-polymeric amic acid salt to a corresponding arylene diimide. The semiconducting thin films can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimide need not be coated but is generated in situ from a solvent-soluble, easily coated aromatic, non-polymeric amic acid salt at relatively lower temperature because the cation portion of the salt acts as an internal catalyst.

Methods of providing semiconductor layers from amic acid salts

An amic acid or amic ester precursor can be applied to a substrate to form a thin film, and is then thermally converted into a semiconducting layer of the corresponding arylene diimide. This semiconducting thin film can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimide need not be coated onto the substrate but is generated in situ from a solvent-soluble, easily coated precursor compound.

Semiconducting devices and methods of preparing

Aromatic non-polymeric amic acid salts are designed to be thermally converted into corresponding arylene diimides. These aromatic, non-polymeric amic acid salts can be used to prepare semiconducting thin films that can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimide need not be coated but is generated in situ from a solvent-soluble, easily coated aromatic, non-polymeric amic acid salt at relatively lower temperature because the cation portion of the amic acid salt acts as an internal catalyst.

Aromatic amic acid salts and compositions

Novel amic acids and amic esters can be thermally converted into corresponding arylene diimides. These amic acids and amic ester can be used as precursors to prepare semiconducting thin films that can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimides need not be coated out of solvent in which they may be insoluble, but they can be generated in situ from a solvent-soluble, easily coated amic acid or amic ester.

Aromatic amic acids or amic esters and compositions

A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to one or both of the imide nitrogen atoms, a substituted or unsubstituted heterocycloalkyl ring system. Such transistors can further comprise spaced apart first and second contacts or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 200&#xb0; C.

Heterocycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors

A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, an aromatic moiety, at least one of which moieties is substituted with at least one electron donating group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100&#xb0; C.

N-type semiconductor materials for thin film transistors

A thin film transistor comprises a layer of organic semiconductor material comprising a configurationally controlled N,N'-dicycloalkyl-substituted naphthalene-1,4,5,8-bis-carboximide compound having a substituted or unsubstituted alicyclic ring independently attached to each imide nitrogen atom with the proviso that at least one of the two alicyclic rings is necessarily a 4-substituted cyclohexyl ring in which a substituent at the 4-position is the sole substituent on the 4-substituted cyclohexyl ring other than the imide attachment; with such substituent being stereochemically disposed as only one of either an essentially trans or cis position, respectively, to the imide nitrogen substituent. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100&#xb0; C.

Configurationally controlled N,N'-Dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors

A thin layer of organic semiconductor material comprising a comprising an organic semiconductor thin film material is disclosed in which the thin film material substantially comprises a heteropyrene compound or derivative. In one embodiment, a thin film transistor comprises a layer of the organic semiconductor material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by relative low-temperature sublimation or solution-phase deposition onto a substrate.

Growing community of inventors

Rochester, NY, United States of America

Wendy G Ahearn