Xiamen, China

Wenbi Cai

USPTO Granted Patents = 10 

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Location History:

  • Xiamen, CN (2015 - 2024)
  • Fujian, CN (2024)

Company Filing History:


Years Active: 2015-2025

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10 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Wenbi Cai

Introduction

Wenbi Cai is a prominent inventor based in Xiamen, China. He has made significant contributions to the field of microelectronics, holding a total of 10 patents. His work focuses on semiconductor devices, showcasing his expertise and innovative spirit.

Latest Patents

One of his latest patents is a semiconductor device with low potential terminals connected to wells. This microelectronic device includes a substrate, at least two doped well regions, an epitaxial structure, and at least two power elements. The doped well regions are disposed in the substrate and are spaced apart from each other. Each of the doped well regions has a doping type opposite to that of the substrate. The epitaxial structure is disposed on the substrate and is in contact with the doped well regions. The power elements are disposed on the epitaxial structure opposite to the substrate and are cascade connected with each other. A low potential terminal of each of the power elements is electrically connected to a respective one of the doped well regions. A method for making the microelectronic device is also provided.

Another notable patent is for a gallium nitride-based compound semiconductor device. This device includes a GaN-based epitaxial structure and an annealed metal layered structure that is formed on the GaN-based epitaxial structure. The annealed metal layered structure includes a metallic barrier layer, a conductive unit, and a protective unit which is formed on a lateral surface of the conductive unit. The metallic barrier layer and the conductive unit are sequentially disposed on the GaN-based epitaxial structure in such order. An ohmic contact is formed between the GaN-based epitaxial structure and the annealed metal layered structure. The protective unit includes a metal oxide material having one of NiAlO, AuAlO, and a combination thereof.

Career Highlights

Wenbi Cai has worked with notable companies such as Xiamen Sanan Integrated Circuit Co., Ltd. and Xiamen Sanan Optoelectronics Technology Co., Ltd. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Throughout his career, Wenbi has collaborated with talented individuals, including Shuying Qiu and Chaoyu Wu. These partnerships have contributed to the advancement of his projects and

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