The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2017

Filed:

Oct. 17, 2015
Applicant:

Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen, CN;

Inventors:

Cuicui Sheng, Xiamen, CN;

Shuying Qiu, Xiamen, CN;

Chaoyu Wu, Xiamen, CN;

Ching-Shan Tao, Xiamen, CN;

Wenbi Cai, Xiamen, CN;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/46 (2010.01); H01L 33/00 (2010.01); H01L 33/20 (2010.01); H01L 33/60 (2010.01); H01L 25/075 (2006.01); H01L 33/10 (2010.01);
U.S. Cl.
CPC ...
H01L 33/46 (2013.01); H01L 25/0753 (2013.01); H01L 33/0062 (2013.01); H01L 33/10 (2013.01); H01L 33/20 (2013.01); H01L 33/60 (2013.01); H01L 33/0079 (2013.01); H01L 2924/0002 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0058 (2013.01);
Abstract

A light emitting diode includes: a substrate of front and back main surfaces; a V-shaped groove, which has a reflecting surface, formed over front surface of the conductive substrate; a light-emitting epitaxial layer, the margin of which has its vertical projection between the bottom and the inner margin of the V-shaped groove, formed over the substrate, so that light emitted from the light-emitting epitaxial layer margin is incident to the mirror surface of the V-shaped groove and emits outwards. This structure can effectively improve extraction efficiency of device and control path of light at peripheral region of the light-emitting epitaxial layer.


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