The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2024
Filed:
Apr. 19, 2021
Applicant:
Xiamen Sanan Integrated Circuit Co., Ltd., Xiamen, CN;
Inventors:
Assignee:
Xiamen Sanan Integrated Circuit Co., Ltd., Xiamen, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 21/02 (2006.01); H01L 29/08 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/66 (2006.01); H01L 29/737 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1004 (2013.01); H01L 21/0254 (2013.01); H01L 21/02543 (2013.01); H01L 21/02546 (2013.01); H01L 29/0817 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/66318 (2013.01); H01L 29/7371 (2013.01);
Abstract
An epitaxial structure includes a composite base unit and an emitter unit. The composite base unit includes a first base layer and a second base layer formed on the first base layer. The first base layer is made of a material of InGaAsN, in which 0<x≤0.2, and 0≤y≤0.035, and when y is not 0, x=3. The second base layer is made of a material InGaAs, in which 0.03≤m≤0.2. The emitter unit is formed on the second base layeropposite to the first base layer, and is made of an indium gallium phosphide-based material. A transistor including the epitaxial structure is also disclosed.