Xiamen Sanan Integrated Circuit Co., Ltd.

Xiamen Sanan Optoelectronics Technology Co., Ltd.

Hunan Sanan Semiconductor Co., Ltd.

Wenbi Cai

Chaoyu Wu

Ching-Shan Tao

Shuying Qiu

Houng-Chi Wei

Cheng Liu

Yonghong Tao

Chih-Hung Yen

Yuci Lin

Cuicui Sheng

Chun-I Wu

Lijun Li

Nien-Tze Yeh

Zhigao Peng

Shenghou Liu

Jian Yang

Nientze Yeh

Ning Xu

Yuanxu Guo

Jie Zhao

Jinpeng Guo

Yongtian Zhou

Hongxing Hu

Yong Wang

Yi-Yen Chen

Shaodong Xu

Yuyu Liang

A microelectronic device includes a substrate, at least two doped well regions, an epitaxial structure, and at least two power elements. The doped well regions are disposed in the substrate, and are spaced apart from each other. Each of the doped well regions has a doping type opposite to that of the substrate. The epitaxial structure is disposed on the substrate, and is in contact with the doped well regions. The power elements are disposed on the epitaxial structure opposite to the substrate, and are cascade connected with each other. A low potential terminal of each of the power elements is electrically connected to a respective one of the doped well regions. A method for making the microelectronic device is also provided.

Semiconductor device with low potential terminals connected to wells

A GaN-based compound semiconductor device includes a GaN-based epitaxial structure and an annealed metal layered structure that is formed on the GaN-based epitaxial structure. The annealed metal layered structure includes a metallic barrier layer, a conductive unit, and a protective unit which is formed on a lateral surface of the conductive unit. The metallic barrier layer and the conductive unit are sequentially disposed on the GaN-based epitaxial structure in such order. An ohmic contact is formed between the GaN-based epitaxial structure and the annealed metal layered structure. The protective unit includes a metal oxide material having one of NiAlO, AuAlO, and a combination thereof.

Gallium nitride-based compound semiconductor device

An epitaxial structure includes a composite base unit and an emitter unit. The composite base unit includes a first base layer and a second base layer formed on the first base layer. The first base layer is made of a material of InGaAsN, in which 0<x≤0.2, and 0≤y≤0.035, and when y is not 0, x=3. The second base layer is made of a material InGaAs, in which 0.03≤m≤0.2. The emitter unit is formed on the second base layeropposite to the first base layer, and is made of an indium gallium phosphide-based material. A transistor including the epitaxial structure is also disclosed.

Epitaxial structure and transistor including the same

A power device includes a substrate, a drift layer disposed on the substrate, a terminal region and an active region disposed in the drift layer, an electrode layer disposed on the active region, a Schottky contact layer disposed between the electrode layer and the active region, a passivation layer disposed on the drift layer, and an isolation layer disposed between the passivation layer and the electrode layer so that the passivation layer and the electrode layer are at least partially separated from each other. The isolation layer, the electrode layer, and the passivation layer each respectively has a thermal expansion coefficient a, b, c, and a>b>c.

Power device and method for making the same

A semiconductor device includes a semiconductor substrate, an epitaxial layer disposed on the semiconductor substrate, a cell zone including multiple unit cells disposed in the epitaxial layer opposite to the semiconductor substrate, a transition zone having a doped region and surrounding the cell zone, a source electrode unit disposed on the epitaxial layer opposite to the semiconductor substrate, and multiple gate electrode units. Each unit cell includes a well region, a source region disposed in the well region, and a well contact region extending through the source region to contact the well region. A method for manufacturing the semiconductor device is also disclosed.

Semiconductor device and method for manufacturing the same

An electrostatic discharge protection structure for a nitride-based device having an active region, an electrostatic discharge protection region outside the active region for forming the electrostatic discharge protection structure, and a field plate formed in the active region is provided. The electrostatic discharge protection structure includes a channel layer, and a barrier layer, a first p-type nitride layer and a metal layer formed on the channel layer in such order. The metal layer is electrically connected to the field plate in the active region. A nitride-based device having the electrostatic discharge protection structure and a method for manufacturing a nitride-based device is also disclosed.

Electrostatic discharge protection structure, nitride-based device having the same and method for manufacturing nitride-based device

A light emitting diode includes: a substrate of front and back main surfaces; a V-shaped groove, which has a reflecting surface, formed over front surface of the conductive substrate; a light-emitting epitaxial layer, the margin of which has its vertical projection between the bottom and the inner margin of the V-shaped groove, formed over the substrate, so that light emitted from the light-emitting epitaxial layer margin is incident to the mirror surface of the V-shaped groove and emits outwards. This structure can effectively improve extraction efficiency of device and control path of light at peripheral region of the light-emitting epitaxial layer.

Light-emitting diode and fabrication method thereof

A warm-white-light LED structure combines a red light wafer and a blue light wafer via a bonding layer. A reflecting layer is arranged over upper and lower surfaces of the bonding layer respectively; the lower surface of the red light wafer takes up one-third or less of the upper surface of the blue light wafer, which effectively reduces packaging structure volume and time of bondings so as to optimize process flow and save fabrication cost.

Warm white LED with stacked wafers and fabrication method thereof

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Xiamen, China

Wenbi Cai